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Photoelectrons emitting structure and an electron tube and photodetector device for the use of the photoelectrons emitting structure.
Photoelectrons emitting structure and an electron tube and photodetector device for the use of the photoelectrons emitting structure.
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机译:光电子发射结构以及使用该光电子发射结构的电子管和光电检测器装置。
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摘要
PURPOSE: To provide a photoelectron emitting surface having remarkably higher sensitivity in comparison with a conventional photoelectron emitting surface using a semiconductor and able to extend a critical wave length to a far longer wavelength, and an electron tube using this surface. ;CONSTITUTION: Since a GaAs layer 22a of a heterojunction semiconductor multi- layer film to be a light absorbing layer 22 has a film thickness of 300Å or less which is shorter than the de Brogie wave length of an electron, it forms a potential well being interposed by adjacent Al0.65Ga0.35As layers 22b each having a large energy gap, and a sub band in accordance with a quantum level is formed in the GaAs layer 22a. Since the Al0.65Ga0.35As layer 22b has a film thickness equal to or thicker than 45Å which an electron can not pass through due to a tunnel effect, this sub band is all the time filled with bound electrons.;COPYRIGHT: (C)1993,JPO&Japio
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机译:目的:提供一种与使用半导体的常规光电子发射表面相比具有显着更高的灵敏度并且能够将临界波长扩展到更长波长的光电子发射表面,以及一种使用该表面的电子管。组成:由于将成为光吸收层22的异质结半导体多层膜的GaAs层22a的膜厚度为300&,因此可以使光吸收层22的厚度减小。小于或小于电子的德布罗吉波长的电子,它形成势阱,该势阱被相邻的每个具有大能量的Al 0.65 Sub> Ga 0.35 Sub> As层22b插入间隙,并且在GaAs层22a中形成根据量子能级的子带。由于Al 0.65 Sub> Ga 0.35 Sub> As层22b具有等于或大于45ang的膜厚度;电子由于隧道效应而不能通过,该子带一直充满被束缚的电子。;版权所有:(C)1993,JPO&Japio
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