首页> 外国专利> Device and procedure to shield a value retention device from harmful influences during the processing of the workpiece.

Device and procedure to shield a value retention device from harmful influences during the processing of the workpiece.

机译:用于保护增值装置免受工件加工过程中有害影响的装置和程序。

摘要

An apparatus for shielding a plurality of wafer registration surfaces 14, 30 and a wafer retention stage 26 from depreciative effects of a chemical etching process includes a pair of etching shields 32, 32' that are positioned along an outside edge of a wafer 10. The wafer 10 is registered to the wafer retention stage 26 by the registration surfaces 14, 30. The wafer retention stage 26, and hence the wafer 10, rotates about an axis 36 through the center of the wafer 10. A chemical etching instrument probe 18 is moved, with respect to the wafer 10, along a fixed wafer diameter 34 while the wafer 10 is rotating. The probe 18 is initially positioned above a first etching shield 32' and is moved, with respect to the wafer 10, across the wafer diameter 34 until it reaches a second etching shield 32. Thus, the probe 18 scans the entire surface of the wafer 10 without extending outside the wafer edge to depreciatively effect the wafer retention materials 14, 26, 30. IMAGE
机译:用于使多个晶片对准表面14、30和晶片保持台26免受化学蚀刻工艺的衰减影响的设备包括沿着晶片10的外边缘定位的一对蚀刻屏蔽件32、32'。晶片10通过对准表面14、30对准晶片保持台26。晶片保持台26以及因此晶片10绕着穿过晶片10的中心的轴线36旋转。化学蚀刻仪器探针18为当晶片10旋转时,相对于晶片10沿着固定的晶片直径34移动。探针18最初位于第一蚀刻护罩32'上方,并相对于晶片10在晶片直径34上移动,直到到达第二蚀刻护罩32。因此,探针18扫描晶片的整个表面。图10中没有延伸到晶片边缘的外面而对晶片保持材料14、26、30产生了不利影响。

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