Treatment of a semiconductor wafer with the control of the critical dimension of the section of the plate using an optical detection of point limits.

摘要

The process of the invention uses optical detectors of the limit points to the locations (25, 26 and 27) of the surface of the plate spaced transversely, each directly measuring the limit point of the step of treatment for its location. A detector is used to control the treatment and from the limit point detected in this position the time of completion of the predicted processing is used for controlling the equipment. The other locations are used to control the execution of the section of the blister. The limits of the locations of the control, determined from the outputs of the detectors are compared to the limit point of control in order to determine the execution of the critical dimensions of the section of the plate and the shape to the specifications. The plates outside the limits may be mentioned, and do not need to be treated more.