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Semiconductor laser controlled by an external cavity.

机译:半导体激光器由外腔控制。

摘要

One end of a semiconductor laser (1) is coated with an antireflection film (1a). A resonator is constructed with a diffraction grating (2) and a mirror in external reflection (4). In addition, a beam separator (3) is provided between the diffraction grating (2) and the mirror in external reflection (4). An output light coming from the laser is transformed into a parallel light (13a) and is supplied to the beam separator (3). The parallel light (13a) modifies its path of light at the level of the beam separator (3), and is then supplied to the resonator. & br / the beam splitter (3) is a reflector of the side of the antireflection film (1a) and said resonator external transforms its characteristic of the characteristic resonance reflective by said beam separator (3).
机译:半导体激光器(1)的一端涂有防反射膜(1a)。谐振器由衍射光栅(2)和外反射镜(4)构成。另外,在外部反射(4)中,在衍射光栅(2)与反射镜之间设置有光束分离器(3)。来自激光器的输出光被转换为平行光(13a),并被提供给光束分离器(3)。平行光(13a)在分束器(3)的水平处改变其光路,然后提供给谐振器。 &分束器(3)是抗反射膜(1a)一侧的反射器,并且所述谐振器外部将其特征转换为由所述分束器(3)反射的特性谐振。

著录项

  • 公开/公告号FR2696286B1

    专利类型

  • 公开/公告日1995-01-13

    原文格式PDF

  • 申请/专利权人 ANDO ELECTRIC;

    申请/专利号FR19930011408

  • 发明设计人 MAEDA MINORU;

    申请日1993-09-24

  • 分类号H01S3/105;

  • 国家 FR

  • 入库时间 2022-08-22 04:07:15

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