Charge transfer device to the gate of étraînement.

摘要

The invention relates to a charge transfer device. Such devices comprise at least one insulated conductive gate (3) between two semiconductor zones. According to the invention, each insulated conductive gate (3) has a width that increases progressively from the first semiconductor zone (1) towards the second semiconductor zone (2). The width of each grid (3) is sufficiently narrow so that the potential wells created by the application of a voltage v to the grid has a depth which increases progressively from the first zone (1) to the second zone (2), thus allowing the driving of the loads. & br / the invention applies to any type of charge transfer device and particularly to the photodiodes.