Method of manufacture of a field effect transistor whose gate is isolated, in particular of the length of the channel and the corresponding transistor.

摘要

To produce the region of the gate of transistor, there is formed, on the upper surface of a first conductive or semiconductor - conductive layer (3) arranged on a layer of insulating primary (2) covering the said predetermined zone of the substrate (1), a stepped structure comprising a surface layer having a thickness selected and forming a step, and it forms, at the location of said operation, using an anisotropic etching of the said surface layer, a projecting part (11) comprising at least one central part (11) formed by the residual portion not etched on the surface layer, whose width at the foot, connected to the thickness of the surface layer, defines the length of the transistor channel. It then performs an anisotropic etching of the block formed in step a) so as to be etched, on the whole of its thickness, the part of the first conductive or semiconductor - conductive layer (3) extending on either side of the said protruding region. The region a semi - conductive or conducting grid is defined at least by the zone remaining non-etched of the said first layer, and is insulated from substrate by the part of the primary layer of insulating zone located under said residual not etched of the first conductive or semiconductor - conductive layer (3).