Source and method for generating high-density plasma with inductive power coupling

摘要

A source and method for generating high density plasma with inductive radio-frequency power coupling is provided in which coil antenna sections (34) within a plasma source (12) are used to generate a high-density uniform plasma. This plasma is then guided into transferred in a transfer chamber (14) and then to a processing chamber (16). Within the processing chamber (16), the plasma reacts with a semiconductor wafer (18) or another workpiece for plasma-enhanced deposition or etch processing.