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IGBT fault current limiting circuit

机译:IGBT故障限流电路

摘要

A circuit for improving the short circuit withstand capability of an IGBT. The circuit utilizes a MOSFET which, when turned on, reduces the voltage applied to the gate of the IGBT during a short circuit condition, thereby lowering the short circuit current passing through the IGBT. A Zener diode is coupled between the MOSFET and the gate of the IGBT to clamp the voltage of the gate of the IGBT to a predetermined voltage when the MOS transistor is turned on during a short circuit condition. The circuit turns the MOSFET on when the voltage at the collector of the IGBT rises during a short circuit condition. If tile fault is of a short, transient type, the circuit advantageously restores the normal gate voltage. The circuit draws a small current from the gate driver and requires no separate DC source, making it feasible to insert the circuit in IGBT modules or connect the circuit as an interface between the gate driver and the gate.
机译:一种用于提高IGBT的短路耐受能力的电路。该电路利用MOSFET,该MOSFET导通时,会在短路情况下降低施加到IGBT栅极的电压,从而降低流经IGBT的短路电流。齐纳二极管耦合在MOSFET和IGBT的栅极之间,以在短路状态下当MOS晶体管导通时将IGBT的栅极的电压钳位到预定电压。在短路条件下,当IGBT的集电极上的电压升高时,该电路将导通MOSFET。如果瓦片故障是短时的瞬变类型,则电路有利地恢复正常的栅极电压。该电路从栅极驱动器汲取少量电流,并且不需要单独的直流电源,因此可以将电路插入IGBT模块或将电路作为栅极驱动器和栅极之间的接口进行连接。

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