Rare earth oxide-based garnet single crystal for magnetostatic device and method for the preparation thereof

摘要

Proposed is a novel rare earth oxide-based magnetic garnet single crystal in the form of a film epitaxially grown in the crystallographic direction of 111 on the substrate of a rare earth oxide-based garnet single crystal, which is useful as a magnetostatic device such as high-frequency oscillators capable of exhibiting improved temperature characteristics. The magnetic garnet single crystal is characterized by the specific chemical composition of the formula (Bi.sub.x R.sub.3-x)(Fe. sub.5-y M.sub.y)O.sub.12, in which R, is a rare earth element selected from the group consisting of Y, Lu, La or a combination thereof, M is Ga, Al or a combination thereof, x is 0.02 to 0.4 and y is 0.6 to 0.8, and also by the specific value of the growth- induced magnetic anisotropy constant Ku.sup.g in the range from 0.3× 10.sup.4 to 1.5×10. sup.4 erg/cm.sup.3 in the crystallographic 111 direction which can be imparted by an annealing heat treatment at a specified temperature.