THREE-DIMENSIONAL INTEGRATED LATCH AND BULK PASS TRANSISTOR FOR HIGH DENSITY FIELD RECONFIGURABLE ARCHITECTURE

摘要

PROBLEM TO BE SOLVED: To provide high-speed, high-density three-dimensional structure by providing a latch circuit in a polycrystalline silicon or an SOI layer, and arranging a pass-transistor in a single-crystal silicon region in a way that the pass- transistor is turned on or off according to the state of the latch. ;SOLUTION: A three-dimensional structure includes bulk silicon or single- crystal silicon 17 and a polysilicon layer or an SOI 19 thereon. A pass-transistor 11 is provided in the bulk silicon 17, while a latch 1 is provided in the polysilicon layer 19. In operation, the transistor 11 is turned on and off according to the state of the latch 1. The transistor 11 is turned on, when the latch 1 sends a high level signal to the gate thereof, and thereby a short circuit is provided between a metallic conductor 13 and a metallic conductor 15. The transistor 11 is turned off, when the latch 1 sends a low level signal to the gate thereof.;COPYRIGHT: (C)1996,JPO