首页> 外国专利> DEVICE AND METHOD FOR FORMING CRYSTALLINE THIN FILM, PLASMA IRRADIATOR, AND METHOD OF PLASMA IRRADIATION

DEVICE AND METHOD FOR FORMING CRYSTALLINE THIN FILM, PLASMA IRRADIATOR, AND METHOD OF PLASMA IRRADIATION

机译:形成晶体薄膜,等离子体辐照器的装置和方法以及等离子体辐照的方法

摘要

PURPOSE: To easily form on any substrate a single crystal thin film with desired crystal azimuth and an axially oriented polycrystal thin film with desired orientation by using a plasma irradiator with a mechanism of accelerating plasma through divergent magnetic field, by setting up an electron check means specifying an opening on the irradiation path, and making the minimum diameter of the opening smaller than the Larmor diameter of an electron and the depth of the opening greater than the device length of electron. ;CONSTITUTION: The figure is an oblique view presenting an example of the constitution of a sheath remover. A sheath remover 18a is constituted of an electrically conductive material such as a metal, being a flat plate with a circular opening at the center, and put in a plasma so as to be rectangular to magnetic lines of force BECR. In this case, electrons each with Larmor diameter DL greater than the opening diameter DS and the device length LD shorter than the depth TS of the opening are impassable through the opening, impinging on the main surface of the sheath remover 18a or the inner wall of the opening without exception, the electrons impinged are rapidly removed to ground voltage and neither accumulated or scattered.;COPYRIGHT: (C)1996,JPO
机译:目的:通过使用具有通过发散磁场加速等离子体的机制的等离子体辐照器,通过设置电子检查装置,在任何基板上轻松形成具有所需晶体方位角的单晶薄膜和具有所需取向的轴向取向多晶​​体薄膜。确定照射路径上的开口,并使开口的最小直径小于电子的拉莫尔直径,并使开口的深度大于电子的器件长度。 ;组成:该图是表示除皮器构造示例的斜视图。护套去除器18a由诸如金属的导电材料构成,其是在中心具有圆形开口的平板,并且被置于等离子中以与磁力线BECR成矩形。在这种情况下,具有拉莫尔直径DL大于开口直径DS且器件长度LD小于开口深度TS的电子无法通过该开口进入,撞击在除皮器18a的主表面或内壁上。开口无一例外,被撞击的电子会迅速移至地电压,并且既不会积累也不会散射。版权所有:(C)1996,日本特许厅

著录项

  • 公开/公告号JPH08119793A

    专利类型

  • 公开/公告日1996-05-14

    原文格式PDF

  • 申请/专利权人 NIYUURARU SYST:KK;MEGA CHIPS:KK;

    申请/专利号JP19940260663

  • 发明设计人 ASAKAWA TOSHIBUMI;YOSHIMIZU TOSHIKAZU;

    申请日1994-10-25

  • 分类号C30B25/02;B01J19/08;C23C16/50;H01L21/20;H01L21/205;H05H1/46;

  • 国家 JP

  • 入库时间 2022-08-22 04:02:41

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