DEVICE FOR VERIFYING RELIABILITY OF ELECTRO-MIGRATION IN CMOS FULL CUSTOM LSI DESIGN

摘要

PURPOSE: To verify the reliability of the electro-migration of a CMOS full custom LSI after design without using circuit simulation. ;CONSTITUTION: In a storage device 1-5, the logical connection information of the electronic circuit of the designed CMOS full custom LSI and a parametered logical connection information storing a characteristic parameter such as the size and the parasitic capacity, etc., of each element after the design are stored. In a verification device 1-6, an output circuit detecting part 2-21 detects an output circuit contained in the CMOS full custom LSI. An operation rate determining part 2-23 and a load capacity calculating part 2-22 calculate operation rate and load capacity for every individual output circuit. A mean current density calculating part 2-24 calculates mean current density for every individual output circuit on the basis of the calculated load capacity and operation rate, and further, fundamental frequency information, supply voltage value information, wiring width and wiring film thickness. A verifying part 2-25 verifies the mean current density by comparing it with reference current density for every individual output circuit.;COPYRIGHT: (C)1996,JPO