DIAMOND THIN FILM STRUCTURE WITH HIGH THERMAL CONDUCTIVITY

摘要

PROBLEM TO BE SOLVED: To improve the thermal conductivities at parallel and vertical directions by depositing diamond layers with different growth rates by chemical vapor deposition on a basic body. ;SOLUTION: The basic body is placed in a gas tight reaction chamber with a gas inlet and a gas outlet; and the inside of the chamber is kept at less than 760 Torr, and also mixture of hydrogen and hydrocarbon of less than 2 vol.% are introduced therein. Next, the substrate is heated at 850-1000°C by causing an electric current to flow in a straight line filament with a diameter of 0.2-1.0 mm, which is placed parallel to the substrate; and the diamond layer 1 with the high thermal conductivity at vertical direction 2, the thickness of 0.40-0.50 mm and half width of less than 7 cm^-1 (Ramann spectrum) is deposited by a chemical vapor deposition on the substrate at the growth rate of ≥1 μm/hour. Next, the substrate is heated to 700-850°C; and a diamond layer 5 with the thickness of 0.01-0.10 mm and half width of less than 7 cm^-1 (Ramann spectrum) is deposited on the diamond layer 1 at the growth rate of ≤1 μm/hour by chemical vapor deposition.;COPYRIGHT: (C)1996,JPO