High-frequency AC electric energy - a relatively low frequency alternating current electrical energy - a system and method for having to process the workpiece and

摘要

A plasma reactor (10) preferably uses a split electrode (26) which surrounds a plasma dome (17) region of the reactor, is driven by high frequency energy selected from VHF and UHF and produces an electric field inside the reactor, parallel to the wafer support electrode (32c). A static axial magnetic field may be used which is perpendicular to the electric field. The above apparatus generates a high density, low energy plasma inside a vacuum chamber (16) for etching metals, dielectrics and semiconductor materials. Relatively lower frequency, preferably RF frequency, auxiliary bias energy applied to the wafer support cathode (32c) controls the cathode sheath voltage and controls the ion energy independent of density. Various etch processes, deposition processes and combined etch/deposition processes (for example, sputter/facet deposition) are disclosed. The triode (VHF/UHF split electrode plus RF wafer support electrode) provides processing of sensitive devices without damage and without microloading, thus providing increased yields. IMAGE