METHOD FOR PLATING COPPER/TUNGSTEN SUBSTRATE AND PRODUCTION OF CERAMIC PACKAGE PROVIDED WITH RADIATING COPPER/TUNGSTEN SUBSTRATE

摘要

PURPOSE: To produce a radiating Cu/W substrate appropriate as a ceramic package by forming a relatively coarse plating layer from which moisture is easily discharged in the first plating stage and forming a dense plating film excellent in etching resistance thereon in the second plating stage. ;CONSTITUTION: A Cu/W substrate obtained by impregnating a W porous sintered compact with molten Cu is plated with Ni. In this case, the Cu/W substrate is baked, the baked substrate is electroplated with Ni in a sulfamic acid bath, the plated substrate is sintered, and the sintered substrate is electroplated with Ni in a Watts bath. Consequently, the dense and indefectible coating film is easily formed in the succeeding sintering stage.;COPYRIGHT: (C)1996,JPO