THRESHOLD VALUE LOGIC GATE CIRCUIT WITH WEIGHT

摘要

PURPOSE: To increase the operational margin of a threshold value logic gate with weight and to apply it to III-V group semiconductor material processing technique by manufacturing the threshold value logic gate with weight by using a field effect transistor provided with one kind of threshold value. ;CONSTITUTION: Electrodes A0, A1-A3 are connected to a floating electrode 2 via semiconductor laminated structural bodies 20, 21-23, respectively. The width of the structural bodies 20-23 are decided in, for example, 2 to 1 to 2 to four. A ratio of 1 to 2 to four that is the one of width of the structural bodies 20-23 is ratio of weight of input potential V1-v3 which permit a current to flow on the structural bodies 20-23, and also, the threshold value of a threshold value gate circuit GC 1 with weight can be set at a desired value by deciding the ratio of the structure 20 to that of width of the structural bodies 21-23 in 1 to 2 to 4 to 2. Moreover, the electrode 2 is coupled with the gate electrode G of a HEMT(high electric mobility electric field effect transistor) provided adjacently.;COPYRIGHT: (C)1996,JPO