Control method and a dynamic random access memory circuit of dynamic random access memory circuit

摘要

A dynamic random access memory circuit and a method of stabilizing current surges in such a memory circuit are provided. Peak current through each sense amplifier (Fig. 1) is stabilized through initiation of the sense and restore operations during the chip active period and completion of the sense and restore operation during the chip precharge period. The delay between first and second sensing signals (Os1, Os2) is controlled to be longer for those temperature and power supply conditions under which the chip is operating fastest. Correspondingly, the delay between first and second sensing signals is made shorter for those temperature and power supply conditions under which the chip is operating slowest. Overall peak current is limited to that drawn through small transistors used to begin turning on the sense amplifier. The duration of the second sensing signal is responsive to the temperature and power supply variation so it endures for an acceptable period in which to complete the sense and restore function. The second sensing signal timing is not determined by the first sensing signal.