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LC ELEMENT, SEMICONDUCTOR DEVICE AND MANUFACTURE OF LC ELEMENT

机译:LC元件,半导体器件和LC元件的制造

摘要

PURPOSE: To provide LC elements and a semiconductor device with a manufacturing method of LC elements which are capable of manufacturing easily and omitting assembling work of components in a post process and forming them as a part of LC or LSI and changing characteristics arbitrarily by changing a capacitor existing like a distributed constant as occasion demands. ;CONSTITUTION: An LC element 100 includes a non-spiral-shaped n+ region 22 formed near the surface of a p-Si substrate and further includes a non-spiral- shaped p+ region 20 formed partially therein, thereby forming a pn junction layer 26. An electrode 10 is formed on the surface of the p+ region 20. Both the electrode 10 and the above-described n+ region 22 function as an inductor respectively while the application of the pn junction layer 26 in backward bias forms a capacitor like a distributed constant and provides an excellent damping characteristic.;COPYRIGHT: (C)1996,JPO
机译:目的:提供一种LC元件和具有该LC元件的制造方法的半导体器件,该LC元件能够容易地制造并且在后处理中省略了部件的组装工作,并且将它们形成为LC或LSI的一部分,并且能够通过改变制造方法来任意改变特性。电容器存在像分布式常数一样的场合。 ;组成:LC元件100包括在p-Si衬底的表面附近形成的非螺旋形的n + 区域22,并且还包括非螺旋形的p + < / Sup>区域20部分地形成在其中,从而形成pn结层26。在p + 区域20的表面上形成电极10。电极10和上述n < Sup> + 区域22分别用作电感器,而在反向偏置中施加pn结层26则形成了一个像分布常数一样的电容器,并提供了出色的阻尼特性。;版权所有:(C)1996,JPO

著录项

  • 公开/公告号JPH0897373A

    专利类型

  • 公开/公告日1996-04-12

    原文格式PDF

  • 申请/专利权人 T I F:KK;

    申请/专利号JP19940257537

  • 发明设计人 IKEDA TAKESHI;OKAMOTO AKIRA;

    申请日1994-09-27

  • 分类号H01L27/04;H01L21/822;H01P1/203;H03H7/01;

  • 国家 JP

  • 入库时间 2022-08-22 03:56:06

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