HIGH DENSITY PLASMA CVD REACTOR USING COMBINED INDUCTIVE COUPLING MODE AND CAPACITIVE COUPLING MODE

摘要

PURPOSE: To uniformly clean the inside of a plasma reactor. ;CONSTITUTION: A vacuum is created in a vacuum chamber while introducing an etchant gas into the chamber through a gas injection port 14 in order to mainly generate a capacitive coupling plasma. The plasma reactor is cleaned by applying RF energy to a sealing recording 24 in the chamber while not necessarily applying the RF energy to a coil antenna 26. Whenever the reactor is to be operated in an inductive coupling mode, the RF power is applied to the coil antenna 26 of the reactor while the sealing electrode 24 is grounded at all times. Whenever the reactor is to be operated in a capacitive coupling mode, the RF power is applied to the sealing electrode 24 at all times by impressing the RF power to the coil antenna 26 of the reactor. Whenever the reactor is to be cleaned, the RF power is applied to the sealing electrode 24 and the antenna 26 while the etchant gas is introduced into the vacuum chamber at all times.;COPYRIGHT: (C)1996,JPO