PHOTOVOLTAIC ELEMENT WITH PIN UNION, IN WHICH THE TYPE I SEMICONDUCTOR IS FORMED FROM A ZNSE OR ZNSETE CONTAINING 1-4 ATOMIC HYDROGEN

摘要

AN IMPROVED CONTACT UNION PHOTOVOLTAIC ELEMENT, WHICH PRODUCES A TYPE P SEMICONDUCTOR LAYER, AND A TYPE N SEMICONDUCTOR LAYER, CHARACTERIZED BY AT LEAST SEMICONDUCTOR TYPE N SEMICONDUCTOR LAYER. CONTAINS AN ELEMENT ELECTED FROM THE GROUP WHICH CONSISTS OF A DEPOSITED FILM FROM ZNSE: H, CONTAINING THE HYDROGEN ATOMS IN A QUANTITY OF 1-4% IN ATOMS AND THE FIELDS OF CRYSTALLINE GRAIN IN A PROPORTION OF 65-85% IN VOLUME PER UNIT OF VOLUME AND A DEPOSITED FILM OF ZNSE1-XTEX: H, WHICH CONTAINS THE HYDROGEN ATOMS IN A QUANTITY OF 1-4% AND THE CRYSTAL GRAIN FIELDS IN A PROPORTION OF 65-85% IN VOLUME PER UNIT OF VOLUME, AND CONTAINING ALSO THE ATOMES OF SE AND TE IN A QUANTITATIVE SE / TE RELATION FROM 1: 9 TO 3: 7 IN NUMBER OF ATOMS. THE PHOTOVOLTAIC ELEMENT OF CONTACT UNION PRESENTS AN IMPROVED EFFICACY OF PHOTOELECTRIC CONVERSION FOR SHORT LIGHT WAVE LENGTH AND HAS A HIGH OPEN CIRCUIT VOLTAGE. THE PHOTOVOLTAIC ELEMENT OF CONTACT UNION IS NOT A CAUSE OF FATIGUE SOME INDUCED BY LIGHT NOT DESIRABLE EVEN AFTER CONTINUOUS USE DURING A LONG PERIOD OF TIME.