AN EPITAXIAL REACTOR, SUSCEPTOR AND GAS-FLOW SYSTEAN EPITAXIAL REACTOR, SUSCEPTOR AND GAS-FLOW SYSTEM M

摘要

PCT No. PCT/EP95/03626 Sec. 371 Date Oct. 7, 1996 Sec. 102(e) Date Oct. 7, 1996 PCT Filed Sep. 14, 1995 PCT Pub. No. WO96/10659 PCT Pub. Date Apr. 11, 1996An epitaxial reactor with a flat disc-shaped susceptor comprises a flat, substantially tubular quartz reaction chamber (12) containing a rotatable susceptor disk (14) having a plurality of recesses (16a-h) for housing a corresponding plurality of disc-shaped wafers (18a-h) of material to be processed, a tank (26) filled with flowing coolant liquid (28) surrounding the substantially tubular chamber (12), a primary supply inductor (90) substantially in the form of a flat spiral disposed outside the reaction chamber (12) in the lower portion of the tank (26) parallel to the susceptor disc (14) and having means (118) for modifying the distance between each individual turn of the primary inductor (90) and the susceptor disc, possibly a secondary inductor (102) formed by turns disposed parallel and closely coupled to the turns of the primary inductor (90), possibly means (158) for selectively connecting each turn of the primary inductor (90) to external loads according to a known technique or for selectively closing each turn of the secondary inductor, and means for providing maximum reflection on all of the walls of the chamber (complete gilding) and possibly means (160) for also providing continuously variable reflection on the face of the chamber disposed above the substrates.