The present invention is intended to provide a BiCMOS circuit which operates normally without causing deterioration of the delay time even at a low voltage, and which has an advantage over a CMOS circuit.;The BiCMOS circuit includes a CMOS circuit for inverting data input to an input terminal, a first circuit for connecting the output point of the CMOS circuit to the base, a power supply voltage connected to the collector, and an emitter connected to the output terminal, A bipolar transistor, a second bipolar transistor having a collector connected to the output terminal and discharging an output terminal, a first conductive-type MOS transistor connected in parallel between the base and the collector, a first conductive-type MOS transistor connected in series with the CMOS-A third conduction type MOS transistor to which a first reference voltage is applied to a gate connected between the input terminal and the gate of the first conduction type MOS transistor; A reverse conducting MOS transistor connected between the gates of the first conductivity type MOS transistors is provided to secure a wide width of the output potential.
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