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A method of simulating electrical characteristics of a semiconductor device and an input data generating device for simulating electrical characteristics of the semiconductor device

机译:一种模拟半导体器件的电特性的方法和一种用于模拟半导体器件的电特性的输入数据生成设备

摘要

It is an object of the present invention to provide a technique suitable for simulation for a semiconductor device, for example, data necessary for simulation such as wiring capacity and current density of a semiconductor device, A method of simulating electric characteristics of a semiconductor device which can be reused as data, accurate data to be written, and shortening of a working time, and an input data generating device used therefor. This configuration is a simulation method for simulating the electrical characteristics of a semiconductor device. The simulation method includes a step 1 for designating a material, an electrical characteristic, and a shape of a part to be inspected of the semiconductor device, An input data generation device for simulation that selects and designates among models, and a simulation method using this data.
机译:发明内容本发明的目的是提供一种适用于半导体器件的仿真的技术,例如仿真所需的数据,诸如半导体器件的布线容量和电流密度。可以重新使用作为数据,要写入的准确数据以及缩短工作时间的输入数据生成设备。该配置是用于模拟半导体器件的电特性的模拟方法。该模拟方法包括步骤1,该步骤1用于指定半导体器件的材料,电特性和要检查的部件的形状;用于在模型之间选择和指定的用于模拟的输入数据生成设备;以及使用该方法的模拟方法。数据。

著录项

  • 公开/公告号KR960012280A

    专利类型

  • 公开/公告日1996-04-20

    原文格式PDF

  • 申请/专利权人 이데이 노브유끼;

    申请/专利号KR19950031292

  • 发明设计人 다쯔미 다까아끼;

    申请日1995-09-22

  • 分类号H01L21/00;

  • 国家 KR

  • 入库时间 2022-08-22 03:45:15

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