PROCESS OF MANUFACTURE OF DIODES WITH S-SHAPED VOLT-AMPERE CHARACTERISTIC

摘要

FIELD: electronics. SUBSTANCE: silicon-plate is cut into crystals which are fired in vacuum in three stages. At first stage they are fired at 800 C for the course of 2 h, at second stage - at 1200 C for the course of 2 h and at third stage - at 800 C for the course of 2 h. Fired crystals are chemically polished. The rectifying and ohmic contacts are deposited. EFFECT: facilitated manufacture.