PROCESS OF MANUFACTURE OF N-P JUNCTIONS IN MONOCRYSTALS CD XHG OO1 OO-OOXTE

摘要

FIELD: manufacture of photodetectors of 1R radiation. SUBSTANCE: indium foil is put on starting crystals of CdHgl-x.Te with X 0.190-.250 of p type of conductance, obtained sandwich is placed into closed volume filled with deionized water. Then volume is heated up to temperature 220-245 C and annealed at same temperature for the course of 500-1000 s. EFFECT: facilitated manufacture and improved quality. 1 dwg, 2 tbl