, where H is thickness of primary layer, h is thickness of grown layer, K23is the square of coefficient of crystallization of metal. EFFECT: improved efficiency of process. 2 dwg"/>
公开/公告号RU2063295C1
专利类型
公开/公告日1996-07-10
原文格式PDF
申请/专利号SU19915013534
申请日1991-07-08
分类号B22D11/00;
国家 RU
入库时间 2022-08-22 03:44:04