A method for producing markings for aligning of marks.

摘要

Process for producing the alignment patterns of masks on an active face of a semiconductor substrate (12) in which it forms a first layer (13) of a material resistant to oxidation, and it is then defined by a pickling localized areas (15 ') to an insulation by a field oxide, in the same time as the alignment patterns (17 ′). br / according to the invention, after the pickling of the layer (13) of antifriction material - oxidation, and by using the remaining parts of this layer as selective mask is made to the substrate surface of the slopes (26) of a determined depth, at least in the windows (18) which contain the alignment patterns, the surface of the substrate is then exposed to the inside of said windows, and finally a step of thermal oxidation for the production of the field oxide (19') in the course of which the alignment patterns (18) are simultaneously covered with oxide (24).