首页> 外国专利> Quanta structure - laser with an ingaasp - boundary layer and method for the production of the laser.

Quanta structure - laser with an ingaasp - boundary layer and method for the production of the laser.

机译:量子结构-具有无间隙的激光器-边界层及其制造方法。

摘要

Disclosed is a graded index separate confinement heterostructure quantum well (GRIN-SCH QW) laser with continuously graded, substantially index matched InGaAsP confinement layer. The inventive device is well adapted for high power output in the wavelength region 1.2- 1.68 &mgr;m. In particular, it can readily be designed to have an output wavelength that makes it suitable as pump source for Er-doped optical fiber amplifiers. A method of manufacturing a laser according to the invention is also disclosed.
机译:公开了具有连续渐变的,基本上折射率匹配的InGaAsP限制层的渐变折射率分离限制异质结构量子阱(GRIN-SCH QW)激光器。本发明的装置非常适合于在1.2-1.68μm的波长区域中的高功率输出。特别地,它可以容易地设计成具有使其适合用作掺Er光纤放大器的泵浦源的输出波长。还公开了一种根据本发明的激光器的制造方法。

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