首页> 外国专利> Method of evaluating the lifetime of a semiconducting material and a device for implementing this process óoeuvre.

Method of evaluating the lifetime of a semiconducting material and a device for implementing this process óoeuvre.

机译:评估半导体材料寿命的方法和实施该方法的装置。

摘要

The invention relates to a method for evaluating the lifetime of a semiconducting material and a device for implementing this method. & br / this method to evaluate the lifetime of a semiconductor material (6) consists of: send (1) with a slot of short wavelength on the surface of this material, which causes the production of carriers; spraying (with 3 and 4) an electromagnetic wave in a range of wavelengths less than or equal to 1 millimeter on the surface; be measured (in 5) the reflected wave in order to obtain a curve of the fading of the carriers created; and (5) in the service life on the basis of this curve. & br / application in particular to the manufacture of semiconductor devices.
机译:本发明涉及一种用于评估半导体材料的寿命的方法以及一种用于实施该方法的装置。 &这种评估半导体材料寿命的方法(6)包括:发送(1)在该材料表面带有短波长的缝隙,这会导致载流子的产生;在表面上喷涂(用3和4)波长小于或等于1毫米的电磁波;测量(在5中)反射波以便获得所产生的载波的衰落曲线; (5)基于该曲线的使用寿命。 &尤其适用于半导体器件的制造。

著录项

  • 公开/公告号FR2713826B1

    专利类型

  • 公开/公告日1996-06-07

    原文格式PDF

  • 申请/专利权人 GAKUEN IKUTOKU;MECS CORPORATION;

    申请/专利号FR19930014971

  • 发明设计人 TATEO KUSAMA;YOICHIRO OGITA;

    申请日1993-12-14

  • 分类号H01L21/66;

  • 国家 FR

  • 入库时间 2022-08-22 03:40:44

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