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Method and apparatus for test generation and fault simulation for sequential circuits with embedded random access memories (RAMs)

机译:用于具有嵌入式随机存取存储器(RAM)的时序电路的测试生成和故障仿真的方法和装置

摘要

Testing of a sequential circuit (10) containing at least one embedded RAM (16) is accomplished by first generating a set of sequential vectors and then applying the vectors in sequence to a set of primary circuit inputs (PO.sub.o -PO.sub.j). The vectors are generated such that upon application to the circuit, the vectors excite potential faults at nodes (A) upstream of the RAM and propagate the effects of the faults through the RAM to the primary circuit outputs (PO.sub.o -PO.sub.j). Also, the test vectors serve to excite faults downstream of the RAM by propagating values through the RAM needed to excite the downstream faults. The fault effects (if any) that propagate to the circuit primary outputs are compared to a set of reference values to determine if any faults are present.
机译:包含至少一个嵌入式RAM(16)的时序电路(10)的测试是通过首先生成一组时序向量,然后将这些向量按顺序应用于一组初级电路输入(PO-PO)来完成的。子j)。生成矢量,从而在应用到电路时,矢量会激发RAM上游节点(A)上的潜在故障,并将故障的影响通过RAM传播到主电路输出(PO-PO)。子j)。同样,测试向量通过在RAM中传播激发下游故障所需的值来激发RAM下游故障。将传播到电路主输出的故障影响(如果有)与一组参考值进行比较,以确定是否存在任何故障。

著录项

  • 公开/公告号US5499249A

    专利类型

  • 公开/公告日1996-03-12

    原文格式PDF

  • 申请/专利权人 AT&T CORP.;

    申请/专利号US19940251550

  • 发明设计人 VISHWANI D. AGRAWAL;TAPAN J. CHAKRABORTY;

    申请日1994-05-31

  • 分类号G06F11/00;

  • 国家 US

  • 入库时间 2022-08-22 03:38:53

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