首页> 外国专利> High density, high speed, semiconductor interconnect using- multilayer flexible substrate with unsupported central portion

High density, high speed, semiconductor interconnect using- multilayer flexible substrate with unsupported central portion

机译:高密度,高速,半导体互连,使用具有不支撑中心部分的多层柔性基板

摘要

An interconnect structure formed of a flexible, multilayer dielectric material such as polyimide, having a support ring, connection points on the section inside the support ring for connecting one or more semiconductor chips, and connection points outside the support ring for connecting to a circuit board. Alignment templates are disclosed which align the semiconductor chip with the connection points.
机译:一种由柔性的多层介电材料(例如聚酰亚胺)形成的互连结构,其具有支撑环,位于支撑环内部的用于连接一个或多个半导体芯片的部分上的连接点以及位于支撑环外部的用于连接至电路板的连接点。公开了对准模板,其使半导体芯片与连接点对准。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号