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Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers

机译:过渡金属掺杂的硫化物,硒化物和碲化物激光晶体和激光器

摘要

A new class of solid state laser crystals and lasers are formed of transition metal doped sulfide, selenide, and telluride host crystals which have four fold coordinated substitutional sites. The host crystals include II-VI compounds. The host crystal is doped with a transition metal laser ion, e.g., chromium, cobalt or iron. In particular, Cr.sup.2+ -doped ZnS and ZnSe generate laser action near 2.3 m. Oxide, chloride, fluoride, bromide and iodide crystals with similar structures can also be used. Important aspects of these laser materials are the tetrahedral site symmetry of the host crystal, low excited state absorption losses and high luminescence efficiency, and the d.sup.4 and d. sup.6 electronic configurations of the transition metal ions. The same materials are also useful as saturable absorbers for passive Q-switching applications. The laser materials can be used as gain media in amplifiers and oscillators; these gain media can be incorporated into waveguides and semiconductor lasers.
机译:新型的固态激光晶体和激光器是由过渡金属掺杂的硫化物,硒化物和碲化物基质晶体形成的,它们具有四倍的配位取代位点。主体晶体包括II-VI化合物。基质晶体中掺杂有过渡金属激光离子,例如铬,钴或铁。尤其是,Cr 2+掺杂的ZnS和ZnSe在2.3 m附近产生激光作用。也可以使用具有相似结构的氧化物,氯化物,氟化物,溴化物和碘化物晶体。这些激光材料的重要方面是主体晶体的四面体位点对称,低激发态吸收损耗和高发光效率,以及d.4和d.d。 sup.6过渡金属离子的电子构型相同的材料还可用作无源Q开关应用的可饱和吸收器。激光材料可用作放大器和振荡器中的增益介质。这些增益介质可以合并到波导和半导体激光器中。

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