Measurements of the near-field intensity distributions of three lead-sulfide-selenide diode lasers operating near 4.8 μm have been made as a function of injection current. Localized emission in the near field exhibits peaked structure of full width from 5 to 10 μm for operation above threshold. From the dependence of the emission profiles on injection current estimates of 25 cm ^(-1) and 0.09 cm/A are made for the distributed loss and gain coefficients for one of the lasers. Optical confinement perpendicular to the p-n junction can be explained in terms of the homojunction properties.
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机译：根据注入电流，已对三个工作在4.8μm附近的硒化硒半导体二极管激光器的近场强度分布进行了测量。对于高于阈值的操作，近场中的局部发射在5至10μm的范围内显示出峰宽结构。根据发射曲线对注入电流的依赖性，对其中一个激光器的分布损耗和增益系数进行了25 cm ^（-1）和0.09 cm / A的估计。垂直于p-n结的光学限制可以用同质结性质来解释。
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