首页>
外国专利>
Semiconductor MOSFET device having a shallow nitrogen implanted channel region
Semiconductor MOSFET device having a shallow nitrogen implanted channel region
展开▼
机译:具有浅氮注入沟道区的半导体MOSFET器件
展开▼
页面导航
摘要
著录项
相似文献
摘要
A boron diffusion region is formed at a surface of a silicon substrate. A pair of n-type source/drain regions are formed at a surface of boron diffusion region. A gate electrode is formed at a region located between paired source/drain regions with a gate insulating film therebetween. A nitrogen implanted region is formed at the surface of silicon substrate located between paired n-type source/drain regions. Nitrogen implanted region has a peak nitrogen concentration at a position of a depth not exceeding 500 Å from the surface of silicon substrate. Thereby, a transistor structure which can be easily miniaturized can be obtained.
展开▼