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MAGNETISM-SENSITIVE SEMICONDUCTOR ELEMENT AND MAGNETIC HEAD USING THE SAME

机译:磁敏半导体元件和使用该元件的磁头

摘要

PROBLEM TO BE SOLVED: To provide a magnetism-sensitive semiconductor element which can follow a high-speed change in magnetic field and can have a high sensitivity and also to provide a magnetic head using the element. ;SOLUTION: In the semiconductor element, an emitter electrode 2 of magnetized material is formed on the same or opposing surface of a semiconductor layer 1 to inject spin-polarized ions into the semiconductor layer 1, one or more collector electrodes 3 of the magnetized material for collecting the injected electrons are formed as opposed to the emitter electrode, and a magnetic field B is applied to the semiconductor layer 1 disposed between the emitter electrode 2 and collector electrode 3.;COPYRIGHT: (C)1997,JPO
机译:解决的问题:提供一种对磁性敏感的半导体元件,该半导体元件可以跟随磁场的高速变化并且可以具有高灵敏度,并且还提供一种使用该元件的磁头。 ;解决方案:在半导体元件中,磁化材料的发射电极2形成在半导体层1的相同或相对表面上,以将自旋极化离子注入到半导体层1中,一个或多个磁化材料的集电极3与发射电极相反地形成用于收集注入的电子的电极,并且将磁场B施加到设置在发射电极2与集电极3之间的半导体层1。版权所有:(C)1997,JPO

著录项

  • 公开/公告号JPH09214016A

    专利类型

  • 公开/公告日1997-08-15

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP19960017268

  • 发明设计人 HARADA NAOKI;

    申请日1996-02-02

  • 分类号H01L43/00;G01R33/06;G01R33/09;G11B5/39;

  • 国家 JP

  • 入库时间 2022-08-22 03:37:14

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