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LEAKAGE CURRENT CONTROL SYSTEM FOR LOW-VOLTAGE CMOS CIRCUIT

机译:低压CMOS电路的漏电流控制系统

摘要

PROBLEM TO BE SOLVED: To provide a control circuit which controls leakage currents in a low-voltage CMOS circuit and, at the same time, can selectively reduce the leakage currents. SOLUTION: A leakage current control circuit 16A is provided with a reference current circuit 118 which is integrated in a semiconductor area and works as a current source, a low-pass current-to-voltage converter 114 which works as a bias circuit, and a testing element 116 which is composed of an MOS transistor. Since the gate and source terminals of the element 116 are short- circuited to each other, only a leakage current flows through the element 116. The reference current circuit 118 supplies input signals to the element 116 and converter 114. The converter 114 compares the input signals with the reference signal corresponding a desired leakage current and supplies a bias signal from the results of the comparison. Because of the bias signal, the leakage current flowing through the element 116 can be controlled in accordance with the reference signal.
机译:要解决的问题:提供一种控制电路,该电路控制低压CMOS电路中的泄漏电流,同时可以有选择地减少泄漏电流。解决方案:泄漏电流控制电路16A设有集成在半导体区域中并用作电流源的参考电流电路118,用作偏置电路的低通电流-电压转换器114,以及测试元件116由MOS晶体管组成。由于元件116的栅极和源极端子彼此短路,所以只有泄漏电流流过元件116。基准电流电路118将输入信号提供给元件116和转换器114。转换器114比较输入信号与参考信号相对应,信号对应于所需的泄漏电流,并根据比较结果提供偏置信号。由于偏置信号,可以根据参考信号来控制流过元件116的泄漏电流。

著录项

  • 公开/公告号JPH09181266A

    专利类型

  • 公开/公告日1997-07-11

    原文格式PDF

  • 申请/专利权人 SUN MICROSYST INC;

    申请/专利号JP19960284980

  • 发明设计人 BOIDO FUAURAA;

    申请日1996-10-28

  • 分类号H01L27/04;H01L21/822;H01L21/8238;H01L27/092;H03K19/0948;

  • 国家 JP

  • 入库时间 2022-08-22 03:36:26

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