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FORMATION OF RECTIFYING ELECTRODE FOR DIAMOND

机译:地层纠偏电极上对金刚石

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a rectifying electrode for diamond in an electronic device which operates even in a high-temperature environment and is made of semiconductor diamond. ;SOLUTION: First, a metal for an oxygen getter is vapor-deposited on oxygen-terminated diamond to form an electrode. Then it is heat-treated at least 300°C for at least one minute. An electrode metal has an electrical negativity of at most 1.8 and an Mg, Hf or Zr can be used therefor, for example. In addition, the diamond is made of semiconductor diamond doped with boron, and it is also formed by laminating the semiconductor diamond and undoped diamond.;COPYRIGHT: (C)1997,JPO
机译:解决的问题:提供一种在电子设备中形成金刚石整流电极的方法,该电子设备即使在高温环境下也能工作,并且由半导体金刚石制成。 ;解决方案:首先,将用于吸氧剂的金属气相沉积在氧封端的金刚石上以形成电极。然后将其在至少300°C热处理至少一分钟。电极金属的负电性至多为1.8,并且例如可以使用Mg,Hf或Zr。另外,该金刚石是由掺有硼的半导体金刚石制成的,并且还通过将半导体金刚石和未掺杂的金刚石层压而形成。; COPYRIGHT:(C)1997,JPO

著录项

  • 公开/公告号JPH0922880A

    专利类型

  • 公开/公告日1997-01-21

    原文格式PDF

  • 申请/专利权人 KOBE STEEL LTD;

    申请/专利号JP19950172446

  • 发明设计人 MIYATA KOICHI;

    申请日1995-07-07

  • 分类号H01L21/28;C30B29/04;H01L21/322;

  • 国家 JP

  • 入库时间 2022-08-22 03:35:08

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