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BIPOLAR PROM CELL AND BIPOLAR PROM INTEGRATED CIRCUIT

机译:双极舞会细胞和双极舞会综合电路

摘要

PROBLEM TO BE SOLVED: To improve the efficiency of delivery inspection and realize cost reduction, by inspecting each zener diode element every one bit before delivery inspection process, in a bipolar PROM integrated circuit wherein zener diode zapping technique is applied. ;SOLUTION: In an NPN type transistor Q1 for selecting data writing, the collector is connected with a zener diode element D2, and the emitter is connected with a control terminal 13, which is grounded via a selection switch. Before delivery inspection process, the selection switch is opened, and data input terminals 5, 6 are controlled at the respective levels. From a transistor Q3, a current is supplied to the base of the NPN transistor Q1 through a resistor R3, and the base potential rises. As the result, a current flows in the forward direction of the zener diode element D2, through the PN junction between the base and the collector of the transistor Q1, and the output of the zener diode element D2 appears on a data output terminal 7 through a resistor R8.;COPYRIGHT: (C)1997,JPO
机译:要解决的问题:在采用齐纳二极管快速转换技术的双极PROM集成电路中,通过在交货检查过程之前每一位对每个齐纳二极管元件进行检查,来提高交货检查的效率并降低成本。 ;解决方案:在用于选择数据写入的NPN型晶体管Q1中,集电极与齐纳二极管元件D2连接,发射极与控制端子13连接,控制端子13通过选择开关接地。在交货检查过程之前,打开选择开关,并将数据输入端子5、6控制在各个级别。电流从晶体管Q3通过电阻器R3提供给NPN晶体管Q1的基极,基极电位上升。结果,电流在齐纳二极管元件D2的正向方向上流过晶体管Q1的基极和集电极之间的PN结,并且齐纳二极管元件D2的输出通过电阻R8 .;版权:(C)1997,JPO

著录项

  • 公开/公告号JPH0982903A

    专利类型

  • 公开/公告日1997-03-28

    原文格式PDF

  • 申请/专利权人 MATSUSHITA ELECTRIC IND CO LTD;

    申请/专利号JP19950231241

  • 发明设计人 FUJITA NORIYUKI;

    申请日1995-09-08

  • 分类号H01L27/102;

  • 国家 JP

  • 入库时间 2022-08-22 03:34:58

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