PROBLEM TO BE SOLVED: To provide a GaAs MESFET having the high value of withstand voltage between an Si substrate and a drain electrode. ;SOLUTION: On an Si substrate 11, an SiO2 layer having the thickness of 1,000Å-2,000Å is provided as an insulating layer 13. On the insulating layer 13, a c-Si layer 15 having the thickness of 1μm is provided. Furthermore, on the c-Si layer 15, an i-GaAs layer 17 having the thickness of 3μm, an Al0.3Ga0.7 As layer 19 having the thickness of 2μm, an n-GaAs layer 21 having the thickness of 50-150nm and an n+-GaAs layer 23 having the thickness of 50nm are sequentially provided. On the n-GaAs layer 21 exposed from the n+-GaAs layer 23, a gate electrode 25 is provided. Furthermore, a source electrode 27 and a drain electrode 29 are provided on the n+-GaAs layer 23 at the right and left sides with the gate electrode 25 in-between. Then, an isolation layer 31 surrounding a GaAs MESFET 100 is provided at the outside of the source electrode 27 and the drain electrode 29 so as to electrically separate the part between the neighboring GaAs MESFETs 100.;COPYRIGHT: (C)1997,JPO
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