dainamitsukumemori device

摘要

PURPOSE:To refresh on the basis of a column address strobe signal by installing a means to control to send and receive the column address strobe signal, a circuit to decrease and increase the condition of an internal counter and an address selection circuit. CONSTITUTION:When an external RAS signal (bar, omitted hereinafter) falls, transmission is executed to a sense control circuit 2 by the signal RAS bar which synchronizes this. Simultaneously at this time, an external line address RA is sent through an address buffer circuit 5 and all X addresses corresponding to that are sensed. After this, since an external CAS bar signal is held to a high level, an output control circuit 4 will not be operated and the output Dout is held to high impedance condition. However, after that when the external CAS bar signal falls, a signal CAS bar synchronized to this and an external column address CA from a buffer circuit 5 are transmitted to the output control circuit and a Y address signal corresponding to the address is outputted to the Dout. Thus, a dynamic memory device which can reflesh can be obtained.