Formation method of crystal growth nuclei or etching nuclei by photon

摘要

PURPOSE:To make it possible to develop a desired circuit pattern by using a semiconductor material for a substrate, forming an amorphous thin film on the surface of the substrate, projecting ultraviolet rays, X rays or white light having a specified wavelength region with the substrate being cooled, forming a semiconductor circuit pattern in the amorphous thin film, and performing heat treatment or chemical etching. CONSTITUTION:Synchrotron discharge light of ultraviolet rays, X rays or white light (wavelength region of 100-105eV) is projected on an amorphous very fine thin film that is formed on a substrate. For example, characters, graphics, circuit patterns, pictures (variable-density images) or photographs are formed at the desired positions with the photons of the light as latent images. The sensitized parts are selectively crystallized or etched by heat treatment, chemical etching or the like. Thus, characters, graphics, circuit patterns, photographs or pictures are made to be apparent images as variable-density images. Exposure and development are separately performed. In this way, not only the method can be utilized for growing a single crystal film, but also the specified circuit patterns, the graphics, the characters or the like can be formed as the latent images having arbitrary shapes and the development can be performed at any time.