METHOD OF MANUFACUTURING SUBSTRATE WITH Ge FINE CRYSTAL NUCLEI AND SUBSTRATE WITH Ge FINE CRYSTAL NUCLEI

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a substrate with Ge fine crystalline nuclei and the substrate with Ge fine crystalline nuclei which manufactures fine crystals serving as nuclei for the growth on a substrate, and controls the grain size and density thereof to manufacture a large grain size polycrystalline Si thin film.;SOLUTION: The method forms island-like independent Ge fine crystals by the solid phase growth method on a glass substrate for electronic industries, quartz glass substrate, thermo-oxidated Si wafer or substrate with SiO₂ film, controls the grain size and density of the Ge fine crystal by oxygen etching at an etching temperature in a range of 300 to 600°C and an etching time, and dispersively disposes the Ge fine crystals having grain sizes of 1-40 nm on the substrate so that the density is 1×10⁵-1×10⁷/cm².;COPYRIGHT: (C)2006,JPO&NCIPI