- The 3Am thin film on the 4 on the upper 2 is used, - dry milking modulo null on 9Np the 3 on the upper

摘要

PURPOSE:To obtain a pure 239Np by fixing a metallic capturing plate at 0.3-10mm distance from the surface of a radiation source made of a thin 243Am film tightly adhered to a metallic base plate and impressing a DC voltage of =100V per 1mm to the capturing plate. CONSTITUTION:A stainless steel base plate 2 is placed on a base plate 1 which is an insulating body made of acryl. The radiation source base plate 3 formed by electrodeposition of 243Am on a platinum plate, a polyethylene spacer 4, a tantalum capturing plate 5 and a stainless steel weight 6 are superposed in this order thereon to assemble the device. Conductors are connected to the stainless steel base plate 2 and the stainless steel weight 6 and an specified voltage is impressed between the radiation source base plate 3 and the capturing plate 5. 239Np can be captured on the capturing plate when the device is rested for the specified time (t) in this state. The capturing rate F(%) can be determined by the following equation based on the radioactivity quantity A1 of the 243Am radiation source, the radioactivity quantity A2 of 249Np, and the disintegration constant lambda of 239Np: F=[(A2/A1)]/{1-exp(-lambdat)}X100.