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Piezoelectric element sensor for LB type cumulative film formation

机译:LB型累积成膜用压电元件传感器

摘要

PURPOSE:To directly detect and control the formation of an LB type cumulative film on the spot, by building up a monomolecular film on a piezoelectric element under the substantially same condition as a solid substrate and detecting the change quantity of the vibration frequency of the piezoelectric element at the time of building-up. CONSTITUTION:The monomolecular film developed on the interface of air and a liquid is transferred to a solid substrate by passing said substrate through the monomolecular film while said film is compressed under definite surface pressure to form an LB type cumulative film. At this time, the monomolecular film is built up on a piezoelectric element, which is provided so as to operate under the substantially same condition as the solid substrate. Then, by detecting the change quantity of the vibration frequency of the piezoelectric element at the time of building-up, the formation of the LB type cumulative film is directly detected and controlled on the spot.
机译:目的:通过在与固体基板基本相同的条件下在压电元件上构建单分子膜并检测压电振动频率的变化量,从而直接检测并控制当场LB型累积膜的形成。建立时的元素。组成:在空气和液体的界面上形成的单分子膜,通过使底物穿过单分子膜,同时在一定的表面压力下将其压缩以形成LB型累积膜,从而将其转移到固体底物上。此时,单分子膜被构建在压电元件上,该压电元件被设置为在与固体基板基本相同的条件下工作。然后,通过检测积聚时的压电元件的振动频率的变化量,直接在现场检测并控制LB型累积膜的形成。

著录项

  • 公开/公告号JP2598260B2

    专利类型

  • 公开/公告日1997-04-09

    原文格式PDF

  • 申请/专利权人 相互薬工株式会社;

    申请/专利号JP19870056277

  • 发明设计人 岡畑 恵雄;

    申请日1987-03-11

  • 分类号G01B17/02;B05D1/20;G01L1/10;H01L21/368;H01L51/00;H03H9/19;

  • 国家 JP

  • 入库时间 2022-08-22 03:28:23

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