Blue-green diode laser.

摘要

A laser diode SEMICONDUCTOR COMPOUND II-VI (10) is formed on OVERLAPPING LAYERS MATERIAL COMPRISING A SUBSTRATE SEMICONDUCTOR single crystal n-type (12) adjacent LASERS GUIDE TYPE N, Y TYPE P (14 Y ( 16) of II-VI semiconductor forming a pn junction, an active layer WALL CUANTICA (18) of II-VI semiconductor between the guide (14) LAYERS AND (16), the first electrode (32) opposed to the substrate (12 ) LAYER GUIDE TYPE N (14), and a second ELECTRO (30) opposite the guide layer p-type (16) LAYER WALL CUANTICA (18). LAYER ELECTRODE (309 CHARACTERIZED PR A ENERGY FERMI. A contact layer ohmic p-type (26) is doped, WITH sHALLOW acceptors having an energy acceptor sHALLOW FOR cONCENTRATION acceptor network of at least 1 x 1017 CM-3, AND UNDERSTANDS STATES SUFFICIENT eNERGY aCCEPTOR eNERGY BETWEEN SHALLOW AND FERMI eNERGY electrode layer DRILLING PERMIT FOR TUNNEL CASCADE FOR CARGO CARRIERS.