OPTICAL DEVICES WITH ELECTRON-BEAM EVAPORATED MULTILAYER MIRROR

摘要

This invention embodies a Vertical Cavity Surface Emitting Laser witha top mirror comprising at least one pair of quarterwave layers, each pair consistingof a low index of refraction layer and a high index of refraction layer, the high indexof refraction layer being a semiconductor chosen from GaP and ZnS and the lowindex of refraction layer being chosen from borosilicate glass (BSG)CaF2, MgF2 and NaF. Especially useful in vertical cavity surface emitting lasers aremirrors formed by a stack of a plurality of pairs of GaP/BSG or ZnS/CdF2. Suchmirrors have a high reflectivity characteristics required for an efficient operation ofthe laser. The GaP/BSG or ZnS/CaF2 mirror structure represents a considerableimprovement over previous designs for VCSELs in terms of ultimate reflectivity,low loss, and post growth processing compatibility.