CHEMICAL VAPOR DEPOSITION OF METAL SULFIDE FILMS FROM METAL THIOCARBOXYLATE COMPLEXES WITH MONODENTATE OR MULTIDENTATE LIGANDS

摘要

In a method of depositing a metal sulfide film on a substrate (7), a solution containing at least one metal compound precursor comprising at least one thiocarboxylate ligand SECR, wherein E is selected from the group consisting of O and S and wherein R is selected from the group consisting of alkyl, aryl, substituted alkyl, substituted aryl, halogenated alkyl, and halogenated aryl is prepared. The substrate in a substrate chamber (4) is heated to a reaction temperature by a heating means (5). The solution is evaporated to form vapors of the metal compound precursor by the use of an aerosol generator (1). The vapors and the substrate heated to the reaction temperature are contacted. The reaction temperature is sufficient to decompose the metal compound precursor to form a metal sulfide film of at least one metal on the substrate.