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METHOD OF MAKING A STRIPE-GEOMETRY II/VI SEMICONDUCTOR GAIN-GUIDED INJECTION LASER STRUCTURE USING ION IMPLANTATION
METHOD OF MAKING A STRIPE-GEOMETRY II/VI SEMICONDUCTOR GAIN-GUIDED INJECTION LASER STRUCTURE USING ION IMPLANTATION
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机译:离子注入法制备条形几何II / VI半导体增益增益的注入激光结构
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摘要
A blue, green or blue-green stripe-geometry II/VI semiconductor injection laser utilizing a Zn.sub.1-u Cd.sub.u Se active layer (quantum well) having Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y cladding layers and ZnS.sub.z Se.sub.1-z guiding layers is fabricated on a GaAs substrate. The stripe-geometry configuration is obtained by ion implanting a dopant such as Nitrogen or Oxygen into the structure to form blocking layer portions of higher resistivity in the second cladding layer and the second guiding layer. These blocking layer portions are positioned on both sides of, and thereby define, a stripe-shaped lateral confinement region of lower resistivity in the second cladding layer and the second cladding layer.
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机译:一种蓝,绿或蓝绿色条纹几何形状的II / VI半导体注入激光器,利用具有Zn1-x Mg的Zn1-u Cd-u Se有源层(量子阱)。在GaAs衬底上制造x x y Se1-sub-y覆盖层和ZnSz Se1-sub-z引导层。通过将诸如氮或氧的掺杂剂离子注入到结构中以在第二覆层和第二引导层中形成具有较高电阻率的阻挡层部分,来获得条纹几何结构。这些阻挡层部分位于第二包层和第二包层中的较低电阻率的条形横向限制区域的两侧,并由此限定。
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