POLYSILICON PLANNERIZING METHOD USING DRY ETCHING AND CHEMICAL MECHANICAL POLISHING PROCESS

摘要

forming a silicon substrate(10) where structures with different pattern sizes are formed; depositing a CVD SiO2 film(12) after depositing a polysilicon film(11) on the silicon substrate(10); leaving the CVD SiO2 film(12) on the bottom and side wall by polishing the CVD SiO2 film(12) revealed on top of a trench pattern; etching the revealed polysilicon film(11) to leave the polysilicon film and the CVD SiO2 film on the trench side wall; and planarizing the etched polysilicon film by mechanical and chemical polishing method after forming a polysilicon spike(13).