Manufacturing method of InP-based communication laser diode

摘要

The present invention relates to a method of manufacturing an InP-based communication laser diode. More particularly, the present invention relates to a method for manufacturing an InP-based laser diode, Instead of the etchant, a brominated chlorine-₂The present invention relates to a manufacturing method of an InP-based communication laser diode that can simplify an overall manufacturing process by omitting a process for forming and removing a thin film. In the case of an InP-based communication laser diode manufacturer, By using a brominated chloride-based etching solution instead of the etching solution,₂InP substrate, an InGaAsP layer, a p-InP layer, a P-InP layer, a P-InP layer, and a P-InP layer are formed on an n-InP substrate,⁺-InGaAsP layer, the DH structure wafer is etched in a sulfuric acid-based etching solution to form a P-type GaN layer on the upper surface of the substrate,⁺-InGaAsP; a step of applying a photoresist (PR) to the upper structure (p-InP layer) obtained through the selective etching step; a step of applying a photoresist A DH surface etching step of etching a substrate having a double hetero structure obtained through the step of developing the surface of the substrate with a chlorine bromide (HBr) etching solution; And a photoresist film removing step of removing the photoresist film from the substrate obtained through this DH wafer etching step.